Pietra Calacatta




The SST39WF1601/1602 devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF1601/1602 write (Program or Erase) with a 1.65-1.95V power
supply. These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39WF1601/1602 devices provide a typical Word-Program time of 28 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes.Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
The SST39WF1601/1602 devices are suited for applications that require convenient and economical updating ofprogram, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

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