Details
Introduction
The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 1.6ms on the 8,628-byte page and an erase operation can be performed in typical 1.5ms on a (1M+54.5K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9GAG08U0E′s extended reliability of P/E cycles which are presented in the Qualification report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.